1 preferred device
reverse blocking thyristors designed primarily for halfwave ac control applications, such as motor controls, heating controls, and power supplies; or wherever halfwave, silicon gatecontrolled devices are needed. ? blocking voltage to 800 volts ? on-state current rating of 25 amperes rms ? high surge current capability e 300 amperes ? rugged, economical to220ab package ? glass passivated junctions for reliability and uniformity ? minimum and maximum values of i gt , v gt , and i h specified for ease of design ? high immunity to dv/dt e 100 v/ m sec minimum @ 125 c ? device marking: logo, device type, e.g., mcr25d, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 125 c, sine wave, 50 to 60 hz, gate open) mcr25d mcr25m MCR25N v drm, v rrm 400 600 800 volts on-state rms current (180 conduction angles; t c = 80 c) i t(rms) 25 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 125 c) i tsm 300 a circuit fusing consideration (t = 8.3 ms) i 2 t 373 a 2 sec forward peak gate power (pulse width 1.0 m s, t c = 80 c) p gm 20.0 watts forward average gate power (t = 8.3 ms, t c = 80 c) p g(av) 0.5 watt forward peak gate current (pulse width 1.0 m s, t c = 80 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 25 amperes rms 400 thru 800 volts preferred devices are recommended choices for future use and best overall value. www.kersemi.com to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode k g a device package shipping ordering information mcr25d to220ab 50 units/rail mcr25m to220ab MCR25N to220ab 50 units/rail 50 units/rail
mcr25d, mcr25m, MCR25N www.kersemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case e junction to ambient r q jc r q ja 1.5 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm i rrm e e e e 0.01 2.0 ma on characteristics peak forward on-state voltage* (i tm = 50 a) v tm e e 1.8 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) i gt 4.0 12 30 ma gate trigger voltage (continuous dc) (v d = 12 v, r l = 100 w ) v gt 0.5 0.67 1.0 volts holding current (v d =12 vdc, initiating current = 200 ma, gate open) i h 5.0 13 40 ma latching current (v d = 12 v, i g = 30 ma) i l e 35 80 ma dynamic characteristics critical rate of rise of offstate voltage (v d = 67% of rated v drm , exponential waveform, gate open, t j = 125 c) dv/dt 100 250 e v/ m s critical rate of rise of onstate current (i pk = 50 a, pw = 30 m sec, dig/dt = 1 a/ m sec, igt = 50 ma) di/dt e e 50 a/ m s *indicates pulse test: pulse width 2.0 ms, duty cycle 2%.
mcr25d, mcr25m, MCR25N www.kersemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) figure 1. typical gate trigger current versus junction temperature figure 2. typical gate trigger voltage versus junction temperature t j , junction temperature ( c) 40 35 30 25 20 15 10 125 110 50 35 20 5 10 25 40 , gate trigger current (ma) 5 0 95 80 65 i gt t j , junction temperature ( c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 125 110 50 35 20 5 10 25 40 , gate trigger voltage (v) 0.3 0.2 95 80 65 v gt
mcr25d, mcr25m, MCR25N www.kersemi.com 4 180 60 90 dc 0.5 0.9 1.3 1.7 2.1 2.5 2.9 0.1 1 10 100 figure 3. typical onstate characteristics v t , instantaneous onstate voltage (volts) i t , instantaneous onstate current (a) 0.1 1 10 100 1000 0.01 0.1 1 figure 4. transient thermal response 1 10 4 r (t) transient thermal r (normalized) t, time (ms) z jc(t) r jc r(t) figure 5. typical holding current versus junction temperature figure 6. typical latching current versus junction temperature figure 7. typical rms current derating figure 8. on state power dissipation t j , junction temperature ( c) 100 10 125 110 50 35 20 5 10 25 40 , holding current (ma) 1 95 80 65 i h t j , junction temperature ( c) 100 10 125 110 50 35 20 5 10 25 40 , latching current (ma) 1 95 80 65 i l i t(rms) , rms onstate current (amps) 130 120 110 100 90 20 18 10 8 6 4 2 0 , case temperature ( c) 80 16 14 12 t c i t(av) , average onstate current (amps) 32 28 24 20 16 12 8 18 16 8 6 4 2 0 , average power dissipation (watts) 4 0 14 12 10 p (av) 20 = conduction angle = 30 60 90 dc = conduction angle = 30 180 maximum @ 125 c typical @ 25 c maximum @ 25 c
mcr25d, mcr25m, MCR25N www.kersemi.com 5 200 300 400 500 600 700 800 0 200 400 600 800 1000 1200 figure 9. typical exponential static dv/dt versus peak voltage. gatecathode open, (dv/dt does not depend on rgk) v pk , peak voltage (volts) static dv/dt (v/us) 110 c 100 c 85 c t j = 125 c 80 85 90 95 100 105 110 115 120 125 0 500 1000 1500 2000 2500 figure 10. typical exponential static dv/dt versus junction temperature. t j , junction temperature ( c ) static dv/dt (v/us) gate cathode open, (dv/dt does not depend on rgk ) v pk = 800 v pk = 600 v pk = 400 v pk = 275 1 2 3 4 5 6 7 8 9 10 160 180 200 220 240 260 280 300 figure 11. maximum nonrepetitive surge current number of cycles i tsm , surge current (amps) tj=125 c f=60 hz 1 cycle
mcr25d, mcr25m, MCR25N 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j to220ab case 221a09 issue z style 3: pin 1. cathode 2. anode 3. gate 4. anode www.kersemi.com
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